PART |
Description |
Maker |
GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
RF3826PCBA-411 RF3826TR7 |
30MHz TO 2500MHz, 9W GaN WIDEBAND 30MHz TO 2500MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
BFS17W |
NPN 1GHz wideband transistor(NPN 1G赫兹 宽带晶体 NPN 1 GHz wideband transistor
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
MAGX-000040-00500P MAGX-000040-SB2PPR |
GaN on SiC D-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T2G4003532-FS-15 |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
MAGX-000035-015000-V1 MAGX-000035-015000-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|